Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements

An extraction method to obtain the induced gate noise (i~/sub g/~/sup 2/~) channel noise (i~/sub d/~/sup 2/~), and their cross correlation (i~/sub g/~i~/sub d/~*~) in submicron MOSFETs directly from scattering and RF noise measurements has been presented and verified by measurements. In addition, th...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 48; no. 12; pp. 2884 - 2892
Main Authors Chih-Hung Chen, Deen, M.J., Yuhua Cheng, Matloubian, M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2001
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Channel noise
CMOS
Extraction
Gates
MOSFETs
Noise
Noise measurement
Radio frequencies
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Summary:An extraction method to obtain the induced gate noise (i~/sub g/~/sup 2/~) channel noise (i~/sub d/~/sup 2/~), and their cross correlation (i~/sub g/~i~/sub d/~*~) in submicron MOSFETs directly from scattering and RF noise measurements has been presented and verified by measurements. In addition, the extracted induced gate noise, channel noise, and their correlation in MOSFETs fabricated in 0.18-/spl mu/m CMOS process versus frequencies, bias conditions, and channel lengths are presented and discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.974722