Self-nucleation growth of InSb nanowires based on indium droplets under the assistance of Au nano-particles by MOCVD

• Published in: Materials letters Vol. 185; pp. 77 - 80
• Main Authors: Jin, Y.J., Zhang, D.H., Liu, H.F., Tang, X.H.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.12.2016; Elsevier BV
• Subjects: Antimonides; Catalysts; Droplets; Gold; Indium; Indium antimonide; Indium antimonides; Intermetallic compounds; Intermetallics; Materials science; Metalorganic chemical vapor deposition; Nanocomposites; Nanostructure; Nanowires; Nucleation; Parameters; Semiconductors; Studies; Temperature; Nanocomposites; Semiconductors; Antimonides; Metalorganic chemical vapor deposition
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2016.08.107

We present the growth of InSb nanowires (NWs) by using metal-organic chemical vapor deposition (MOCVD). During the process, an indium rich layer was created by introducing TMIn source before initializing the InSb NW growth. The effects of growth parameters such as temperature and V/III ratio on the product have been well studied. The growth of InSb NWs occurs within a small temperature range. This study also indicated that the nanowire quality was also affected at very high or very low input V/III ratio. A self-nucleation growth based on indium droplets was proposed to be the growth mechanism of the InSb NWs obtained here, which is unlike the conventional tip-led VLS or VSS growth in the catalyst-assisted processes. •InSb NWs nearly in form of array have been vertically obtained by MOCVD.•The effects of temperature, V/III ratio on the growth of InSb NWs have been studied.•A self-nucleation growth mode was demonstrated for the InSb NW obtained in this work.•The InSb nanowires obtained show promise for future nanoelectronic devices.