Universal Method for Extracting Transport Parameters From Monte Carlo Device Simulation

• Published in: IEEE transactions on electron devices Vol. 54; no. 11; pp. 3092 - 3096
• Main Authors: Brugger, S.C., Schenk, A.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Boltzmann equation; Computer simulation; device simulation; Devices; Diffusion; Distribution functions; Electronics; Exact sciences and technology; generalized drift-diffusion equation; inverse scattering operator; Logic gates; Mathematical model; Molecular electronics, nanoelectronics; Monte Carlo methods; Nanocomposites; Nanomaterials; Nanoscale devices; Nanostructure; Resistors; Scattering; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transport; transport parameters; Monte Carlo method; Boltzmann equation; inverse scattering operator; generalized drift-diffusion equation; Numerical simulation; Diffusion equation; device simulation; Ballistic transport; Drift mobility; Parameter extraction; Nanoelectronics; transport parameters
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2007.906937

The extraction of transport parameters as mobilities and diffusivities has been a subject of research for more than 20 years. However, the solutions proposed up to now are not satisfactory particularly when applied to nanoscale devices. In this brief, we review the two most popular methods to extract mobilities and show how they fail in nanoscale devices, where transport is strongly quasi-ballistic. We also show that these methods are not appropriate to extract tensorial transport parameters. As an alternative, we propose to use recently derived general definitions of mobilities and diffusivities that naturally solve these problems and, thus, constitute a universal method to extract transport parameters.