Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation
Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to identify devices with a single active trap. The physical characteristics of the trap have been extracted based on Shockley–Read–Hall models...
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| Published in | Solid-state electronics Vol. 117; pp. 60 - 65 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
01.03.2016
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| Abstract | Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to identify devices with a single active trap. The physical characteristics of the trap have been extracted based on Shockley–Read–Hall models, revealing the possible trends of capture and emission times of the trap according to its physical and energetic position. The effect of the temperature on the characteristic times has been studied in the range from 248 to 323K validating the results obtained at room temperature. Finally, the impact of back-bias on the RTN fluctuation has been modelled through the Lim–Fossum interface coupling relationships, allowing to predict accurately the experimental results. |
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| AbstractList | Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to identify devices with a single active trap. The physical characteristics of the trap have been extracted based on Shockley–Read–Hall models, revealing the possible trends of capture and emission times of the trap according to its physical and energetic position. The effect of the temperature on the characteristic times has been studied in the range from 248 to 323K validating the results obtained at room temperature. Finally, the impact of back-bias on the RTN fluctuation has been modelled through the Lim–Fossum interface coupling relationships, allowing to predict accurately the experimental results. |
| Author | Ruiz, Rafael Marquez, Carlos Rodriguez, Noel Gamiz, Francisco Ohata, Akiko |
| Author_xml | – sequence: 1 givenname: Carlos surname: Marquez fullname: Marquez, Carlos email: carlosmg@ugr.es organization: Department of Electronics, CITIC-University of Granada, 18071 Granada, Spain – sequence: 2 givenname: Noel surname: Rodriguez fullname: Rodriguez, Noel organization: Department of Electronics, CITIC-University of Granada, 18071 Granada, Spain – sequence: 3 givenname: Francisco surname: Gamiz fullname: Gamiz, Francisco organization: Department of Electronics, CITIC-University of Granada, 18071 Granada, Spain – sequence: 4 givenname: Rafael surname: Ruiz fullname: Ruiz, Rafael organization: Department of Electronics, CITIC-University of Granada, 18071 Granada, Spain – sequence: 5 givenname: Akiko surname: Ohata fullname: Ohata, Akiko organization: Collaboration Center for Research and Development, Utsunomiya University, Japan |
| BookMark | eNp9kE1uFDEQhS0UJCaBA7DzBdy4-sfdLVYoJBApMBIJa6vark48eOyR7YkId-GuOIQ1qyqp3nv19J2ykxADMfYWZAMS1LtdkzM1rYShAWhk275gG5jGWbS9HE7YRspuElClr9hpzjspZatAbtjvC0-mJGfQc3OPCU2h5H5hcTHwuPJvGGzc81vydJfwcM-_RpeJu8Avj94_io908FTI8hvnnYlBbIO4CvnoscTEv2xvLi9uMz8GS4nTz0J1sbzQ_kAJyzERTxjuiNcvfEHzQywOM49_r7XBa_ZyRZ_pzb95xr7XvPPP4nr76er8w7UwnRqLsGpeOxiVmifAdqAZF8CVZmlgsSOqEda-XaZ-lsPSIyqrZJVMs-0HWDq1dGcMnnNNijknWvUhuT2mRw1SP_HVO1356ie-GkBXvtXz_tlDtdiDo6SzcRQMWZcqUm2j-4_7DwLUiF0 |
| CitedBy_id | crossref_primary_10_1109_TED_2018_2873838 crossref_primary_10_1109_TED_2024_3392180 crossref_primary_10_1088_1361_6641_ab6103 crossref_primary_10_1109_LED_2017_2672783 crossref_primary_10_1109_LED_2018_2835142 crossref_primary_10_1016_j_chaos_2022_112224 crossref_primary_10_1016_j_physa_2019_121820 crossref_primary_10_1109_TED_2022_3213502 crossref_primary_10_1007_s00170_022_08949_z crossref_primary_10_1016_j_mee_2019_110994 crossref_primary_10_1016_j_mee_2019_111027 crossref_primary_10_1116_1_5059384 crossref_primary_10_1109_ACCESS_2020_2993612 crossref_primary_10_3390_sym15071448 |
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| ContentType | Journal Article |
| Copyright | 2015 Elsevier Ltd |
| Copyright_xml | – notice: 2015 Elsevier Ltd |
| DBID | AAYXX CITATION |
| DOI | 10.1016/j.sse.2015.11.022 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1879-2405 |
| EndPage | 65 |
| ExternalDocumentID | 10_1016_j_sse_2015_11_022 S003811011500341X |
| GroupedDBID | --K --M -~X .DC .~1 0R~ 123 1B1 1RT 1~. 1~5 4.4 457 4G. 5VS 6TJ 7-5 71M 8P~ 9JN AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AAXUO ABFNM ABFRF ABJNI ABMAC ABNEU ABTAH ABXDB ABXRA ABYKQ ACDAQ ACFVG ACGFO ACGFS ACNCT ACNNM ACRLP ADBBV ADEZE ADMUD ADTZH AEBSH AECPX AEFWE AEKER AENEX AEZYN AFFNX AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AHJVU AIEXJ AIKHN AITUG AIVDX AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ ASPBG AVWKF AXJTR AZFZN BBWZM BJAXD BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 F5P FDB FEDTE FGOYB FIRID FNPLU FYGXN G-2 G-Q G8K GBLVA HMV HVGLF HZ~ H~9 IHE J1W JJJVA KOM LY7 M24 M38 M41 MAGPM MO0 N9A NDZJH O-L O9- OAUVE OGIMB OZT P-8 P-9 P2P PC. PZZ Q38 R2- RIG RNS ROL RPZ SDF SDG SDP SES SET SEW SMS SPC SPCBC SPD SPG SSM SSQ SST SSZ T5K TAE TN5 WH7 WUQ XFK XSW ZMT ZY4 ~G- AAXKI AAYXX AFJKZ AKRWK CITATION |
| ID | FETCH-LOGICAL-c367t-d69f31766981a25e9ab1afe90c1bd7a671f42b84905b4aa6d609ab89d451b36b3 |
| IEDL.DBID | AIKHN |
| ISSN | 0038-1101 |
| IngestDate | Thu Sep 26 16:09:20 EDT 2024 Fri Feb 23 02:31:10 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Keywords | MOSFET Silicon-On-Insulator Back-bias Reliability Random Telegraph Noise Buried oxide |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c367t-d69f31766981a25e9ab1afe90c1bd7a671f42b84905b4aa6d609ab89d451b36b3 |
| PageCount | 6 |
| ParticipantIDs | crossref_primary_10_1016_j_sse_2015_11_022 elsevier_sciencedirect_doi_10_1016_j_sse_2015_11_022 |
| PublicationCentury | 2000 |
| PublicationDate | 2016-03-01 |
| PublicationDateYYYYMMDD | 2016-03-01 |
| PublicationDate_xml | – month: 03 year: 2016 text: 2016-03-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Solid-state electronics |
| PublicationYear | 2016 |
| Publisher | Elsevier Ltd |
| Publisher_xml | – name: Elsevier Ltd |
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| SSID | ssj0002610 |
| Score | 2.2709184 |
| Snippet | Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used... |
| SourceID | crossref elsevier |
| SourceType | Aggregation Database Publisher |
| StartPage | 60 |
| SubjectTerms | Back-bias Buried oxide MOSFET Random Telegraph Noise Reliability Silicon-On-Insulator |
| Title | Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation |
| URI | https://dx.doi.org/10.1016/j.sse.2015.11.022 |
| Volume | 117 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LT8MwDLbGdoED4ine8oETUqBN26w9Ih4aoG0SD2m3KmlSqTzaaR0HLvwT_itOHwgkuHBsG6uRbTmfE_sLwKHhFjU7CROpNMznjmbkyoJJTi4tjIwCZfchhyMxePCvJ8GkA2dtL4wtq2xifx3Tq2jdvDlptHkyzTLb40urjVtBGodi8WQBetUhURd6p1c3g9FXQKYkoWFnpISJBNrDzarMqywtWaYbHFsuT85_X56-LTmXK7DcYEU8raezCh2Tr8HSNwbBdfi4qK6xsZrG5It7uW6txCLFW5nr4gXv29slcFRkpcEsR5t7vrFzMyXDGY132TP5RM7GObuy5ek2F8fh-O7y4r5E22g2w3a_HC2dVcPFjDPbnID0F1QyeaI8W5ZYVF9pBhvwQPJnA9bcuMAST_TnTIso9SxlZBS6kgcmksqVqYmcxFW6L0XfTX2uQj9yyIRSCi0cGhJG2g9c5QnlbUI3L3KzBWh7eIO-R-iIAATXKhSSoIgMnVQLT3O9DUetouNpTawRtxVnjzFZJbZWoQQlJqtsg9-aIv7hHTEF_r_Fdv4ntguL9CTqSrM96M5nr2afoMdcHcDC8bt70DjYJzTq2Xo |
| link.rule.ids | 315,783,787,4511,24130,27938,27939,45599,45693 |
| linkProvider | Elsevier |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LT8MwDI5gHIAD4inG0wdOSGFt2mbtEQHTBntIsEm7VUmTSuXRTus48GP4rzh9oCHBhWtTq1Fs2Z9T-zMhF5oZ1GxFlMdCU5dZiqIpcyoYmjTXIvCkuYccDHl34t5PvekKual7YUxZZeX7S59eeOvqSas6zdYsSUyPL0Ybu4A0Fvri6SpZQzQQoLGvXfceusNvh4xJQsXOiAkTCtQ_N4syrzw3ZJm2d2W4PBn7PTwthZzONtmqsCJcl9vZISs63SWbSwyCe-TzrhhjY04aom_u5bK1ErIYHkWqsjcY19MlYJgluYYkBZN7ftBbPUPFaQVPySvaREpHKe2Z8nSTi8Ng9NS5G-dgGs3mUN-Xg6GzqriYYW6aEwC_AlJEL5hnixyyYhV3sE8mKH_TpdXEBRo5vL2gigexYygjA98WzNOBkLaIdWBFtlRtwdt27DLpu4GFKhSCK27hK36gXM-WDpfOAWmkWaoPCZgeXq_tIDpCAMGU9LlAKCJ8K1bcUUw1yWV90OGsJNYI64qz5xC1EhqtYIISolaaxK1VEf6wjhAd_99iR_8TOyfr3fGgH_Z7w4djsoErvKw6OyGNxfxdnyIMWcizysy-AJCT23c |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Electrical+characterization+of+Random+Telegraph+Noise+in+Fully-Depleted+Silicon-On-Insulator+MOSFETs+under+extended+temperature+range+and+back-bias+operation&rft.jtitle=Solid-state+electronics&rft.au=Marquez%2C+Carlos&rft.au=Rodriguez%2C+Noel&rft.au=Gamiz%2C+Francisco&rft.au=Ruiz%2C+Rafael&rft.date=2016-03-01&rft.issn=0038-1101&rft.volume=117&rft.spage=60&rft.epage=65&rft_id=info:doi/10.1016%2Fj.sse.2015.11.022&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_sse_2015_11_022 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0038-1101&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0038-1101&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0038-1101&client=summon |