Displacement-sensitive organic field effect transistor

Thin films of organic semiconductor copper phthalocynanine (CuPc) and Al were deposited in sequence by vacuum evaporation on a glass substrate with Ag source and drain electrodes. The effect of displacement on the properties of the fabricated field effect transistor with metal (aluminium)-semiconduc...

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Bibliographic Details
Published inInternational journal of electronics Vol. 99; no. 1; pp. 91 - 101
Main Authors Karimov, Kh.S., Saleem, M., Mahroof-Tahir, M., Qasuria, T.A., Khan, Adam, Khan, T.A.
Format Journal Article
LanguageEnglish
Published Abingdon Taylor & Francis Group 01.01.2012
Taylor & Francis LLC
Subjects
Copper
COPPER PHTHALOCYANINE
DEPOSITION
Displacement
DRAINS
ELECTRODES
ELECTRONIC PRODUCTS
Electronics
Field effect transistors
Glass substrates
metal-semiconductor Schottky junction, displacement sensor
ORGANIC COMPOUNDS
organic field effect transistor
Semiconductor devices
Semiconductors
THIN FILMS
TRANSISTORS
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Summary:Thin films of organic semiconductor copper phthalocynanine (CuPc) and Al were deposited in sequence by vacuum evaporation on a glass substrate with Ag source and drain electrodes. The effect of displacement on the properties of the fabricated field effect transistor with metal (aluminium)-semiconductor (copper phthalocyanine) Schottky junction was investigated. It was observed that the drain-source resistance of this organic field effect transistor was decreased with displacement.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0020-7217
1362-3060
DOI:10.1080/00207217.2011.609982