Displacement-sensitive organic field effect transistor
Thin films of organic semiconductor copper phthalocynanine (CuPc) and Al were deposited in sequence by vacuum evaporation on a glass substrate with Ag source and drain electrodes. The effect of displacement on the properties of the fabricated field effect transistor with metal (aluminium)-semiconduc...
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Published in | International journal of electronics Vol. 99; no. 1; pp. 91 - 101 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Abingdon
Taylor & Francis Group
01.01.2012
Taylor & Francis LLC |
Subjects | |
Online Access | Get full text |
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Summary: | Thin films of organic semiconductor copper phthalocynanine (CuPc) and Al were deposited in sequence by vacuum evaporation on a glass substrate with Ag source and drain electrodes. The effect of displacement on the properties of the fabricated field effect transistor with metal (aluminium)-semiconductor (copper phthalocyanine) Schottky junction was investigated. It was observed that the drain-source resistance of this organic field effect transistor was decreased with displacement. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0020-7217 1362-3060 |
DOI: | 10.1080/00207217.2011.609982 |