Atomic layer deposition in porous structures: 3D photonic crystals

• Published in: Applied surface science Vol. 244; no. 1; pp. 511 - 516
• Main Authors: King, J.S., Heineman, D., Graugnard, E., Summers, C.J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.05.2005; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Optical materials; Optical microcavities; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optics; Photoluminescence; Photonic band gap properties; Photonic bandgap materials; Physics; Three-dimensional photonic crystals; Three-dimensional photonic crystals; Photonic band gap properties; Optical microcavities; Photoluminescence; Scanning electron microscopy; Zinc sulfides; Atomic layer method; Inorganic compounds; Photonic band gap; Porous materials; Three-dimensional systems; Transition element compounds; Photonic crystals; Titanium oxides; Reflection spectrum; Infiltration; Crystal structure
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.10.110

This paper reports recent results from studies of atomic layer deposition for the infiltration of three-dimensional photonic crystals. Infiltration of ZnS:Mn and TiO 2 are reported for SiO 2-based opal templates. It has been demonstrated that high filling fractions can be achieved and that the infiltrated material can be of high crystalline quality as assessed by photoluminescence measurements. The highly conformal and uniform coatings obtained in these studies are shown to contribute significantly to the photonic band gap properties. These investigations show the advantages of atomic layer deposition (ALD) as a flexible and practical pathway for attaining high performance photonic crystal structures and optical microcavities.