Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates

• Published in: Journal of crystal growth Vol. 148; no. 1; pp. 25 - 30
• Main Authors: Giani, A., Podlecki, J., Pascal-Delannoy, F., Bougnot, G., Gouskov, L., Catinaud, C.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.1995; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronics; Engineering Sciences; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Vapor phase epitaxy; growth from vapor phase; Gallium arsenides; Inorganic compounds; Epitaxial layers; Gallium antimonides; Semiconductor materials; Indium antimonides; Ternary compounds; Organometallic compounds; Binary compounds; VPE; Crystal growth from vapors; Experimental study; Indium arsenides; Mismatch lattice; Heterojunctions; Indium Antimonides arsenides; Carrier mobility; Photoconductivity; IV characteristic; Carrier density

We study the growth of InAs 0.91Sb 0.09 lattice matched on GaSb presenting a bandgap of 0.29 eV (4.2 μm) at 300 K. The layers are grown on (100) GaSb and GaAs substrates at atmospheric pressure in a vertical reactor MOVPE (metal organic vapor phase epitaxy) system using trimethylindium (TMIn), trime...