Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates

• Published in: Journal of crystal growth Vol. 148; no. 1; pp. 25 - 30
• Main Authors: Giani, A., Podlecki, J., Pascal-Delannoy, F., Bougnot, G., Gouskov, L., Catinaud, C.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.1995; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronics; Engineering Sciences; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Vapor phase epitaxy; growth from vapor phase; Gallium arsenides; Inorganic compounds; Epitaxial layers; Gallium antimonides; Semiconductor materials; Indium antimonides; Ternary compounds; Organometallic compounds; Binary compounds; VPE; Crystal growth from vapors; Experimental study; Indium arsenides; Mismatch lattice; Heterojunctions; Indium Antimonides arsenides; Carrier mobility; Photoconductivity; IV characteristic; Carrier density
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)00828-0

We study the growth of InAs 0.91Sb 0.09 lattice matched on GaSb presenting a bandgap of 0.29 eV (4.2 μm) at 300 K. The layers are grown on (100) GaSb and GaAs substrates at atmospheric pressure in a vertical reactor MOVPE (metal organic vapor phase epitaxy) system using trimethylindium (TMIn), trimethylantimony (TMSb) and arsine (AsH 3). We report the results on growth rate and InSb incorporation versus growth parameters as temperature and TMSb partial pressure for different V III ratios. Carrier density and mobility of InAsSb undoped layers are given. Optical photoconductivity measurements are presented with a wavelength cut off up to 5.4 μm at 300 K, and the absorption by atmospheric CO 2 at 4.25 μm is clearly detected. The I- V curves of (n)InAsSb/(n and p)GaSb heterojunctions are presented. At room temperature, the dark current for the n/n heterostructure is 70 μA at −1 V, while the n/p junction is ohmic.