Reproducibility and stability of N-Al codoped p-type ZnO thin films
Reproducible and stable p-type ZnO thin films have been prepared by the N–Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50–100 Ωcm, 1×1017–8×1017 cm−3, a...
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Published in | Journal of materials science Vol. 41; no. 2; pp. 467 - 470 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Heidelberg
Springer
2006
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Reproducible and stable p-type ZnO thin films have been prepared by the N–Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50–100 Ωcm, 1×1017–8×1017 cm−3, and 0.1–0.6 cm2/Vs, respectively, for the N–Al codoped p-type ZnO films. Hall measurement, X-ray diffraction, and optical transmission were carried out to investigate the changes of the properties with the storage period. Results show that the p-type characteristics of the N–Al codoped ZnO films are of acceptable reproducibility and stability. In addition, the N–Al codoped p-type ZnO films have good crystallinity and optical quality. The properties are time independent. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-2461 1573-4803 |
DOI: | 10.1007/s10853-005-2279-y |