Reproducibility and stability of N-Al codoped p-type ZnO thin films

Reproducible and stable p-type ZnO thin films have been prepared by the N–Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50–100 Ωcm, 1×1017–8×1017 cm−3, a...

Full description

Saved in:
Bibliographic Details
Published inJournal of materials science Vol. 41; no. 2; pp. 467 - 470
Main Authors LU, J. G, ZHU, L. P, YE, Z. Z, ZHUGE, F, ZHAO, B. H, MA, D. W, WANG, L, HUANG, J. Y
Format Journal Article
LanguageEnglish
Published Heidelberg Springer 2006
Springer Nature B.V
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Reproducible and stable p-type ZnO thin films have been prepared by the N–Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50–100 Ωcm, 1×1017–8×1017 cm−3, and 0.1–0.6 cm2/Vs, respectively, for the N–Al codoped p-type ZnO films. Hall measurement, X-ray diffraction, and optical transmission were carried out to investigate the changes of the properties with the storage period. Results show that the p-type characteristics of the N–Al codoped ZnO films are of acceptable reproducibility and stability. In addition, the N–Al codoped p-type ZnO films have good crystallinity and optical quality. The properties are time independent.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-005-2279-y