Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN

A comprehensive annealing study of W, WSiN, and Nb refractory contacts to both p- and n-GaN was performed. Samples were examined by current-voltage (I-V) measurements. Both W and Nb contacts to n-GaN showed rectifying characteristics with Schottky barrier heights (q phi sub(B)) of 0.63 eV. For p-GaN...

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Published inJournal of electronic materials Vol. 28; no. 3; pp. 228 - 233
Main Authors Shiojima, Kenji, McInturff, David T., Woodall, Jerry M., Grudowski, Paul A., Eiting, Christopher J., Dupuis, Russ D.
Format Journal Article
LanguageEnglish
Published Warrendale Springer Nature B.V 01.03.1999
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Summary:A comprehensive annealing study of W, WSiN, and Nb refractory contacts to both p- and n-GaN was performed. Samples were examined by current-voltage (I-V) measurements. Both W and Nb contacts to n-GaN showed rectifying characteristics with Schottky barrier heights (q phi sub(B)) of 0.63 eV. For p-GaN, the I-V curves showed very leaky behavior. In contrast, I-V curves of WSiN/n-GaN were very leaky while those of WSiN/p-GaN were rectifying with q phi sub(B) of 0.8 eV. The degradation temperature of both W and WSiN contacts was 700 degree C and that of Nb contacts was 300 degree C.
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ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-999-0019-9