Deep silicon etch modeling for fabrication of 200-mm SCALPEL masks

• Published in: Microelectronic engineering Vol. 57; pp. 607 - 612
• Main Authors: Dauksher, W.J., Clemens, S.B., Resnick, D.J., Smith, K.H., Mangat, P.J.S., Rauf, S., Ventzek, P.L.G., Arunachalam, V., Ramamurthi, B.N., Ashraf, H., Lea, L., Hall, S., Johnston, I.R., Hopkins, J., Bhardwaj, J.K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2001; Elsevier Science
• Subjects: Applied sciences; Bosch etch process; Deep silicon etch modeling; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); SCALPEL mask; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Bosch etch process; SCALPEL mask; Deep silicon etch modeling; Electron scattering; Microelectronic fabrication; Electron beam lithography; Plasma etching; Mask; Silicon; Modeling
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(01)00550-0

One avenue for increasing the available pattern area on SCALPEL masks is to gravitate towards a dry etch process for membrane fabrication. As mature as Bosch etch processes are for MEMS applications and the like, there is still significant process development required before the technology can be successfully ported to meeting the stringent requirements for SCALPEL mask fabrication. In order to better understand the Bosch process and reduce process development time, an integrated equipment and feature scale model has been created. Electron, neutral, ion, and radical density distributions in the STS reactor will be described in detail. Very good correlation is observed between experimental and calculated data. Most significantly, the computed output from the feature scale model is in excellent agreement with profiles experimentally generated.