Schottky barriers in carbon nanotube heterojunctions
Electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes are investigated. Ineffective screening of the long-range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semi...
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| Published in | Physical review letters Vol. 85; no. 1; p. 150 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
United States
03.07.2000
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| Online Access | Get more information |
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| Summary: | Electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes are investigated. Ineffective screening of the long-range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semiconductor heterostructures. The length of depletion region varies over a wide range sensitively depending on the doping strength. The Schottky barrier gives rise to an asymmetry of the I-V characteristics of heterojunctions, in agreement with recent experimental results by Yao et al. and Fuhrer et al. Dynamic charge buildup near the junction results in a steplike growth of the current at reverse bias. |
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| ISSN: | 1079-7114 |
| DOI: | 10.1103/physrevlett.85.150 |