Investigation of the running-in process and friction coefficient under the lubrication of ionic liquid/water mixture
The tribological properties of three different films commonly used in microelectromechanical systems (MEMS) under the lubrication of ionic liquid (IL)/water mixtures with various concentrations in the running-in process have been investigated. Results show that coefficients of friction (COFs) and we...
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Published in | Applied surface science Vol. 255; no. 12; pp. 6408 - 6414 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.04.2009
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | The tribological properties of three different films commonly used in microelectromechanical systems (MEMS) under the lubrication of ionic liquid (IL)/water mixtures with various concentrations in the running-in process have been investigated. Results show that coefficients of friction (COFs) and wear rates for low temperature silicon oxide (LTO)/Si
3N
4 vary in a similar way to the ones for poly-Si/Si
3N
4 under the lubrications of different IL/water mixtures. In contrast, the differences in COFs and wear rates are more significant in that the COFs and wear rates increase dramatically with the decrease in IL/water concentration in the case of self-mated Si
3N
4, while the differences in COFs and wear rates for the two other tribopairs are relatively small when the concentration is changed. The period of the running-in process reduces with the increase in IL/water concentration for all the tribopairs. Effective hydrodynamic lubrication can be found in the case of Si
3N
4/Si
3N
4 tribopair at higher IL/water concentrations without an evident running-in process, however, such a phenomenon cannot be observed for the other two tribopairs. Different wear mechanisms will also be analyzed in this paper. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2009.02.029 |