Measurement of Refractive Index for High Reflectance Materials with Terahertz Time Domain Reflection Spectroscopy

A method to measure the refractive index for high reflectance materials in the terahertz range with terahertz time domain reflection spectroscopy is proposed. In this method, the THz waveforms reflected by a silicon wafer and high reflectance sample are measured respectively. The refractive index of...

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Bibliographic Details
Published inChinese physics letters Vol. 26; no. 11; p. 114210
Main Authors Wen-Feng, Sun, Xin-Ke, Wang, Yan, Zhang
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2009
Subjects
Mathematical models
Reflection
Reflectivity
Refractive index
Refractivity
Silicon
Spectroscopy
Time domain
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Summary:A method to measure the refractive index for high reflectance materials in the terahertz range with terahertz time domain reflection spectroscopy is proposed. In this method, the THz waveforms reflected by a silicon wafer and high reflectance sample are measured respectively. The refractive index of the silicon wafer, measured with the THz time domain transmission spectroscopy, is used as a reference in the THz time domain reflective spectroscopy. Therefore, the complex refractive index of the sample can be obtained by resorting to the known reflective index of the silicon and the Fresnel law. To improve the accuracy of the phase shift, the Kramers--Kronig transform is adopted. This method is also verified by the index of the silicon in THz reflection spectroscopy. The bulk metal plates have been taken as the sample, and the experimentally obtained metallic refractive indexes are compared with the simple Drude model.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/26/11/114210