Formation of nanodots on oblique ion sputtered InP surfaces

• Published in: Applied surface science Vol. 256; no. 2; pp. 562 - 566
• Main Authors: Som, T., Chini, T.K., Katharia, Y.S., Tripathy, S., Kanjilal, D.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30.10.2009; Elsevier
• Subjects: 61.80.Jh; 68.55.Ln; 81.16.Rf; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; InP; Ion sputtering; Nanodots; Physics; 61.80.Jh; InP; 68.55.Ln; 81.16.Rf; Nanodots; Ion sputtering; Inorganic compounds; Semiconductor materials; Indium phosphide; Sputtering
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2009.08.052

Using a field emission gun based scanning electron microscopy, we report the formation of nanodots on the InP surfaces after bombardment by 100 keV Ar + ions under off-normal ion incidence (30° and 60° with respect to the surface normal) condition in the fluence range of 1 × 10 16 to 1 × 10 18 ions cm −2. Nanodots start forming after a threshold fluence of about 1 × 10 17 ions cm −2. It is also seen that although the average dot diameter increases with fluence the average number of dots decreases with increasing fluence. Formation of such nanostructured features is attributed due to ion-beam sputtering. X-ray photoelectron spectroscopy analysis of the ion sputtered surface clearly shows In enrichment of the sputtered InP surface. The observation of growth of nanodots on the Ar +-ion sputtered InP surface under the present experimental condition matches well with the recent simulation results based on an atomistic model of sputter erosion.