Selective-Area Growth of Thick Diamond Films Using Chemically Stable Masks of Ru/Au and Mo/Au

Selective-area growth of diamond films in microwave-plasma chemical vapor deposition was performed using newly developed masks. By forming chemically stable masks made of Ru/Au or Mo/Au, which have high melting points, good adhesion to diamond, and difficulty in forming carbide compounds, patterned...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 51; no. 7; pp. 070202 - 070202-3
Main Authors Nagase, Masanori, Watanabe, Katsumi, Umezawa, Hitoshi, Shikata, Shinichi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.07.2012
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Summary:Selective-area growth of diamond films in microwave-plasma chemical vapor deposition was performed using newly developed masks. By forming chemically stable masks made of Ru/Au or Mo/Au, which have high melting points, good adhesion to diamond, and difficulty in forming carbide compounds, patterned diamond films with a large thickness of 50 μm, a large area of 5 mm 2 , and a high orientation in the [001] direction were successfully grown on (001) diamond substrates without degradation of the crystal quality of masked areas.
Bibliography:Optical microscope images of the diamond substrate after selective-area growth of diamond film with the Ru/Au mask. (a) Top view of the whole substrate with Ru/Au masks, and (b) enlarged view of Ru/Au mask (a portion of the Ru/Au mask was removed intentionally). SEM images of the edge of the patterned diamond film grown by using (a) the chemically stable Ru/Au mask and (b) the conventional Ti/Au mask. The inset of (a) shows an entire Ru/Au mask. Nitrogen doping (N/C = 10%) was used for growing both diamond films. Raman spectra of masked areas under Ti/Au, Al 2 O 3 and Ru/Au masks. (a) Optical microscope and (b) SEM images of patterned diamond film grown by using the Mo/Au mask. Nitrogen doping was not used in the growth (N/C = 0%). XRD patterns for substrate after selective-area growth. Each substrate was grown under different conditions. (a) Ru/Au mask, without nitrogen doping (N/C = 0%) and 30 h growth, (b) Ru/Au mask, nitrogen doping (N/C = 10%) and 100 h growth, and (c) after removing mask, without nitrogen doping (N/C = 0%) and 30 h growth. : impurities.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.070202