Spectroscopic ellipsometry of very thin tantalum pentoxide on Si

• Published in: Applied surface science Vol. 255; no. 22; pp. 9211 - 9216
• Main Authors: Karmakov, I., Konova, A., Atanassova, E., Paskaleva, A.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 30.08.2009; Elsevier
• Subjects: Algorithm; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Constituents; Cross-disciplinary physics: materials science; rheology; Depth profile; Exact sciences and technology; High- k; Physics; Spectroscopic ellipsometry; T 2O 5/Si; 68; 77.55.+f; 68.55.jd; Spectroscopic ellipsometry; Algorithm; 78.68.+m; 78.67.−n; 68.47.Fg; Constituents; Depth profile; 68.55.Nq; T 2O 5/Si; High- k; 78.67.-n; Ellipsometry; 68.SS.jd; O; Tantalum; High-k; T; Transition elements; Si; Silicon; Depth profiles
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2009.07.014

Variable angle spectroscopic ellipsometry of very thin T 2O 5 layers on Si and the previously published appropriate algorithm for data interpretation have been successfully applied in terms of accurate characterization of very thin T 2O 5/Si systems. The simulation procedure following a simple three and four layered model was used assuming an existence of inhomogeneous interfacial layers. Quantitative determination of the thicknesses and composition identification were achieved, both for the top T 2O 5 layer and for an interfacial layer. The constituents in the interfacial layer and its depth profiles were recognized.