Post-annealing of solution-based metal-induced laterally crystallized poly-Si with triple-frequency YAG laser

In this paper, the properties of nickel solution-based metal-induced lateral crystallized poly-Si (S-MILC) post-annealed by a triple frequency YAG solid-state laser have been investigated in detail. After the post-annealing treatment, the performance of S-MILC TFT improved because the field effect m...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 18; no. S1; pp. 351 - 354
Main Authors li, Juan, Meng, Zhiguo, Wong, Man, Wu, Chunya, Kwok, Hoi Sing, Xiong, Shaozhen
Format Conference Proceeding Journal Article
LanguageEnglish
Published Norwell, MA Springer 01.10.2007
Springer Nature B.V
Subjects
Applied sciences
Crystallization
Electronics
Exact sciences and technology
Lasers
Materials
Nickel
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
Solid state lasers
Thin film transistors
Transistors
YAG
YAG lasers
Aluminium oxide
Performance evaluation
Voltage threshold
Annealing
Iron oxide
YAG laser
Polycrystal
Nickel
Thin film transistor
YAG
Solid state laser
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Summary:In this paper, the properties of nickel solution-based metal-induced lateral crystallized poly-Si (S-MILC) post-annealed by a triple frequency YAG solid-state laser have been investigated in detail. After the post-annealing treatment, the performance of S-MILC TFT improved because the field effect mobility increased from 110 cm super(2)/V.s to 200 cm super(2)/V.s, the sub-threshold slope (S) decreased from 0.75 V/dec to 0.29 V/dec and the threshold voltage (V sub(th)) decreased from 3.2 V to 0.7 V.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-007-9242-4