A triphenylene derivative as a novel negative/positive tone resist of 10 nanometer resolution

• Published in: Microelectronic engineering Vol. 53; no. 1; pp. 425 - 428
• Main Authors: Tada, T., Kanayama, T., Robinson, A.P.G., Palmer, R.E., Allen, M.T., Preece, J.A., Harris, K.D.M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.2000; Elsevier Science
• Subjects: Applied sciences; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Integrated circuits; Lithography, masks and pattern transfer; Microelectronic fabrication (materials and surfaces technology); Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Performance evaluation; High resolution; Dry process; Electron beam; Durability; Nanostructure; Experimental study; Aspect ratio; Negative resist; Timbre; Nanometer scale; Radiation dose; Three dimensional structure; Positive resist
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(00)00348-8

We show that a triphenylene derivative, 2,3,6,7,10,11-hexapentyl-oxytriphenylene, acts as an electron beam resist of 10-nm resolution with high dry-etch durability. The triphenylene derivative exhibited positive and negative behaviors depending on the dose and developers. When pentanol was used as a developer, positive behavior was observed for electron doses between ∼ 3 × 10 −4 and ∼ 1 × 10 −3 C/cm 2 at 20 keV, and at higher doses, the resist exhibited negative behavior. When monochlorobenzene was used as a developer, only the negative behavior was observed with a sensitivity of 2× 10 −3 C/cm 2 at 20 keV. Performance of the resists were demonstrated defining 10-nm dots and lines (negative tone), and fabricating a high aspect-ratio Si nanostructure with a single layer process.