Programming characteristics of p-channel Si nano-crystal memory

In this work, the programming characteristics of a p-channel nano-crystal memory is studied. The hole tunneling component from the inversion layer and the electron tunneling component from the valence band in the nano-crystal were separated successfully by independent measurement of the current at t...

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Bibliographic Details
Published inIEEE electron device letters Vol. 21; no. 6; pp. 313 - 315
Main Authors Han, Kwangseok, Kim, Ilgweon, Shin, Hyungcheol
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Charge carrier processes
Current measurement
Dielectrics
Electric potential
Electron tunneling
Electrons
Flash memory
Low voltage
Nanocrystals
Nonvolatile memory
Programming
Scalability
Terminals
Tunneling
Valence band
Voltage
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Summary:In this work, the programming characteristics of a p-channel nano-crystal memory is studied. The hole tunneling component from the inversion layer and the electron tunneling component from the valence band in the nano-crystal were separated successfully by independent measurement of the current at the body terminal and at the source/drain terminal of the memory. For small gate voltage, the hole tunneling current is dominant during programming. However, for large programming voltage, the valence band electron tunneling from the dot into the substrate becomes dominant. Finally, the comparison of retention characteristics between programmed holes and electrons shows that holes have longer retention time.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.843161