Yttria-stabilized zirconia obtained by MOCVD: applications

• Published in: Thin solid films Vol. 317; no. 1; pp. 241 - 244
• Main Authors: Garcia, G, Figueras, A, Casado, J, Llibre, J, Mokchah, M, Petot-Ervas, G, Calderer, J
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 01.04.1998; Elsevier Science
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity of specific materials; Cross-disciplinary physics: materials science; rheology; Electrodes; Electronic transport in condensed matter; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOCVD; Physics; YS2; Electrodes; YS2; MOCVD; Thin films; Inorganic compounds; Electrical properties; Zirconium oxides; Transition element compounds; Stabilized zirconia; Crystal growth from vapors; Experimental study; Yttrium oxides
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(97)00622-6

This paper deals with the preparation and characterization of YSZ layers obtained by MOCVD using Y(thd) 3 and Zr(thd) 4, where thd=2,2,6,6,-tetramethyl-3,5-heptanedionate, as organometallic precursors. Yttria-stabilized zirconia (YSZ) layers deposited on porous alumina covered with LaSrMnO 3 electrodes were used as solid electrolytes. Electrical characterizations were carried out by Spectral Complex Impedance measurements on multilayer devices such as air/electrode/YSZ electrolyte/electrode/Al 2O 3 porous/air, showing very promising results.