Dielectric characterization of ferroelectric thin films deposited on silicon

This paper describes some experimental results concerning the dielectric characterizations of PZT, PT and BT ferroelectric thin films deposited on silicon. Firstly, the ferroelectric properties of these films are checked, notably the high dielectric constant values. Secondly, assuming a simple elect...

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Published inMicroelectronics and reliability Vol. 39; no. 2; pp. 251 - 256
Main Authors Legrand, C., Haccart, T., Velu, G., Chambonnet, D., Remiens, D., Burgnies, L., Mehri, F., Carru, J.C.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 1999
Elsevier
Subjects
Applied sciences
Electronics
Exact sciences and technology
Materials
Frequency characteristic
Electrical conductivity
Ferroelectric materials
Platinum
Dielectric properties
Properties of materials
Silicon
Permittivity
Thin film
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Summary:This paper describes some experimental results concerning the dielectric characterizations of PZT, PT and BT ferroelectric thin films deposited on silicon. Firstly, the ferroelectric properties of these films are checked, notably the high dielectric constant values. Secondly, assuming a simple electrical model, we derive from impedance measurements the conductivity of the platinum deposited as a bottom electrode.
Bibliography:SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(98)00238-8