Bistable diodes grown by silicon molecular beam epitaxy

Si devices with two double δ-doped (one p- δ and one n- δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I–V bistability phenomenon was observed in those devices. We used a `band switching' mechanism to explain the bistability. Devices with different doping and spacer widt...

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Bibliographic Details
Published inThin solid films Vol. 321; no. 1; pp. 201 - 205
Main Authors Zhu, Xuegen, Zheng, Xinyu, Pak, Mike, Tanner, Martin O, Wang, Kang L
Format Journal Article Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier B.V 26.05.1998
Elsevier Science
Subjects
Applied sciences
Band engineering
Bistability
Diode
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Tunnel
δ-doping
δ-doping
Tunnel
Diode
Bistability
Band engineering
Thermal characteristic
Microelectronic fabrication
Voltage current curve
Molecular beam condensation
Tunnel effect
Energy band
Planar doping
Semiconductor diode
Silicon
Bistable
Switching
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Summary:Si devices with two double δ-doped (one p- δ and one n- δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I–V bistability phenomenon was observed in those devices. We used a `band switching' mechanism to explain the bistability. Devices with different doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I–V characteristics was shown to confirm our proposed mechanism.
Bibliography:SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
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ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)00473-8