Electrical and piezoresistive properties of ion beam deposited DLC films

• Published in: Applied surface science Vol. 254; no. 16; pp. 5252 - 5256
• Main Authors: Meškinis, Š., Gudaitis, R., Kopustinskas, V., Tamulevičius, S.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.06.2008; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Diamond like carbon; Electrical properties; Electrical properties of specific thin films; Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots); Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Ion beam deposition; Low-field transport and mobility; piezoresistance; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Piezoresistive effect; Diamond like carbon; Piezoresistive effect; Ion beam deposition; Electrical properties; Space-charge-limited conduction; Electrical conductivity; Diamond-like carbon; Low field; Poole-Frenkel effect; Ion beams; Electric field effects; Ion sources; Transport processes; Silicon; IV characteristic; Heterostructures; Piezoresistance
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.02.037

In present study diamond like carbon (DLC) films were deposited by closed drift ion source from the acetylene gas. The electrical and piezoresistive properties of ion beam synthesized DLC films were investigated. Diode-like current–voltage characteristics were observed both for DLC/nSi and DLC/pSi heterostructures. This fact was explained by high density of the irradiation-induced defects at the DLC/Si interface. Ohmic conductivity was observed for DLC/nSi heterostructure and metal/DLC/metal structure at low electric fields. At higher electric fields forward current transport was explained by Schottky emission and Poole–Frenkel emission for the DLC/nSi heterostructures and by Schottky emission and/or space charge limited currents for the DLC/pSi heterostructures. Strong dependence of the diamond like carbon film resistivity on temperature has been observed. Variable range hopping current transport mechanism at low electric field was revealed. Diamond like carbon piezoresistive elements with a gauge factor in 12–19 range were fabricated.