Carrier dynamics in p-type InGaAs/GaAs quantum dots

• Published in: Journal of materials science. Materials in electronics Vol. 18; no. S1; pp. 363 - 365
• Main Authors: WEN, X. M, DAO, L. V, DAVIS, J. A, HANNAFORD, P, MOKKAPATI, S, TAN, H. H, JAGADISH, C
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Norwell, MA Springer 01.10.2007; Springer Nature B.V
• Subjects: Applied sciences; Carriers; Cross-disciplinary physics: materials science; rheology; Dynamic tests; Dynamics; Electronics; Exact sciences and technology; Gallium arsenide; Gallium arsenides; Indium gallium arsenides; Materials; Materials science; Nanoscale materials and structures: fabrication and characterization; Photoluminescence; Physics; Quantum dots; Relaxation; Time resolution; Quantum dot; Rise time; p type semiconductor; Doping; Phonon; Photoluminescence; Doped materials; Relaxation time
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-007-9241-5

In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.