Graded gate VDMOSFET

In this work, we present a novel RF VDMOSFET with graded gate structure. It can be fabricated by regrowing gate oxide after gate patterning. This structure enables a very thin gate oxide to be used in the channel region; thus a much high transconductance can be obtained. At the gate edges, the gate...

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Bibliographic Details
Published inIEEE electron device letters Vol. 21; no. 4; pp. 176 - 178
Main Authors Xu, Shuming, Can, Kian Paau, Foo, Pang Dow, Su, Yi, Liu, Yong
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Breakdown
Breakdown voltage
Capacitance
Channels
Degradation
Devices
Electric potential
Fabrication
Frequency
Gallium nitride
Gates
Hafnium
Low voltage
Manufacturing
Oxides
Patterning
Transconductance
Voltage
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Summary:In this work, we present a novel RF VDMOSFET with graded gate structure. It can be fabricated by regrowing gate oxide after gate patterning. This structure enables a very thin gate oxide to be used in the channel region; thus a much high transconductance can be obtained. At the gate edges, the gate oxide thickness increases smoothly to about three times that of the channel region. This releases the electric field crowding at the gate edge, improving the breakdown voltage from 24 V to 68 V.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.830973