RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions

• Published in: Microelectronic engineering Vol. 48; no. 1; pp. 185 - 188
• Main Authors: Lukyanchikova, N.B., Petrichuk, M.V., Garbar, N.P., Simoen, E., Claeys, C.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 1999; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Charge density; MOS technology; Field effect transistor; Surface charge; Microelectronic fabrication; Experimental result; Electric field; Submicrometer; n channel; RTS noise; Time constant
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(99)00367-6

By measuring the RTS capture kinetics in submicron nMOSFETs under conditions of a constant drain current but changed gate and substrate bias in linear operation, it has been found that a high surface electric field E s is the important factor that controls the RTS capture kinetics and the Coulomb blockade energy ΔE. In fact, it is shown that the capture time constant and the value of ΔE may be presented as unique functions of the value of N sE s and N sE s 2, respectively, where N s is the inversion surface charge density in the channel. This effect is attributed to the fact that some distance exists between the centroid of the inversion layer and the Si SiO 2 interface under conditions of surface quantization occuring at sufficiently high values of E s, and this distance decreases with increasing E s.