Chopping effect on the crystallinity of ZnO films prepared by a r.f. planar magnetron sputtering method

• Published in: Thin solid films Vol. 338; no. 1; pp. 265 - 268
• Main Authors: Han, B.M, Chang, S, Kim, S.Y
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 29.01.1999; Elsevier Science
• Subjects: Chopping frequency; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Sputtering; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; X-ray diffraction; Zinc oxide; X-ray diffraction; Zinc oxide; Chopping frequency; Sputtering; Magnetrons; Zinc oxides; Inorganic compounds; Films; Transition element compounds; Binary compounds; Fabrication structure relation; Crystallinity; Crystal growth from vapors; Experimental study; Radiofrequency sputtering
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(98)01080-3

We have investigated the chopping effect on the crystallinity of the ZnO films prepared by using a modified r.f. planar magnetron sputtering method, where the sputtering process is periodically chopped. In the experiment we have found that if the deposition and pause time is chosen optimally for the renucleation of ZnO grains, a highly c-axis-oriented ZnO film with a large crystallite size can be grown on the SiO 2/Si(100) substrate.