Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer
We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54μm in all the samples. The PL spectra of the Si:Er...
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Published in | Physica. B, Condensed matter Vol. 340-342; pp. 818 - 822 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
31.12.2003
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Subjects | |
Online Access | Get full text |
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Summary: | We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5×1016cm−3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er. |
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ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/j.physb.2003.09.225 |