Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer

• Published in: Physica. B, Condensed matter Vol. 340-342; pp. 818 - 822
• Main Authors: Ishiyama, T., Yoshida, M., Yamashita, Y., Kamiura, Y., Date, T., Hasegawa, T., Inoue, K., Okuno, K.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 31.12.2003
• Subjects: Erbium; Photoluminescence; Silicon; Tensile strain; 78.55.Ap; Tensile strain; Photoluminescence; 78.66.Dg; Silicon; 68.55.Ln; 81.15.Hi; Erbium
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2003.09.225

We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5×1016cm−3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.