Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor

• Published in: Journal of electronic materials Vol. 28; no. 8; pp. 970 - 974
• Main Authors: SUN JUNG KIM, YOUNG HUN SEO, KEE SUK NAHM, YUN BONG HAHN, HYUN WOOK SHIM, SUH, E.-K, KEE YOUNG LIM, HYUNG JAE LEE
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.08.1999; Springer Nature B.V
• Subjects: Chemical vapor deposition; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Iii-v semiconductors; Luminescence; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Radiative recombination; Sapphire; Substrates; Vapor phases; CVD; Vacancies; Semiconductor materials; Gallium nitrides; Photoluminescence; Radiative recombination; Experimental study
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-999-0206-8

The origin of the radiative recombination leading to yellow luminescence (YL) has been elucidated by the study of luminescence properties of GaN films grown with two different gas feeding methods. GaN films were grown on a (0001) sapphire substrate in a rapid thermal chemical vapor deposition (RTCVD) reactor. GaN films emitted two different luminescence energies, 2.2 and 3.47 eV, depending on the introducing position of hydrogen gas in the growth reactor. The distribution of the TMGa flow and gas phase reactions in the reactor were investigated to understand the effect of the gas feeding methods on the optical properties of GaN films. The results suggest that YL is related to Ga vacancies in the grown films.