Responsivity properties of ZnTe/GaAs heterostructures formed with pulsed-laser deposition

• Published in: Solar energy materials and solar cells Vol. 93; no. 1; pp. 25 - 27
• Main Authors: Acharya, K.P., Erlacher, A., Ullrich, B.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 2009; Elsevier
• Subjects: Applied sciences; Energy; Exact sciences and technology; Gallium arsenide; Natural energy; Pulsed-laser deposition; Responsivity; Solar energy; Zinc telluride; Gallium arsenide; Zinc telluride; Responsivity; Pulsed-laser deposition; Gallium arsenides; Optoelectronics; Zinc tellurides; Bias; Pulsed laser deposition; V shape; Direct current; Solar energy; Optoelectronic device; Heterostructures
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2008.02.024

The paper deals with the optoelectronic properties of the technologically appealing ZnTe/GaAs hetero-pairing formed with nanosecond infrared pulsed-laser deposition. Depending on the applied bias polarity of only 0.5 V, the spectral shape of the direct current responsivity is either a narrow (0.29 meV) peak at 1.378 eV or a broad response starting at the GaAs bandgap. The spectra of the alternating responsivity did not show such a drastic bias dependence. The results are interpreted by the peculiar absorption properties at the ZnTe/GaAs interface.