Defect study in ZnO related structures—A multi-spectroscopic approach

• Published in: Applied surface science Vol. 255; no. 1; pp. 58 - 62
• Main Authors: Ling, C.C., Cheung, C.K., Gu, Q.L., Dai, X.M., Xu, S.J., Zhu, C.Y., Luo, J.M., Tam, K.H., Djurišić, A.B., Beling, C.D., Fung, S., Lu, L.W., Brauer, G., Anwand, W., Skorupa, W., Ong, H.C.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 31.10.2008; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; DLTS; Doping and impurity implantation in iii-v and ii-vi semiconductors; Electron and ion emission by liquids and solids; impact phenomena; Exact sciences and technology; Ii-vi semiconductors; Nanorod; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other interactions of matter with particles and radiation; PAS; Photoemission and photoelectron spectra; Photoluminescence; Physics; Positron annihilation; Schottky contact; Structure of solids and liquids; crystallography; XPS; ZnO; PAS; Schottky contact; DLTS; XPS; ZnO; PL; Nanorod; Interface defect; Ion implantation; Inorganic compounds; Vacancies; Transition element compounds; Photoluminescence; Optoelectronic devices; Positron annihilation; Positron beams; p type semiconductor; Zinc oxide; Nitrogen additions; Ohmic contacts; Defect structure; Arrays; Nanostructured materials; X-ray photoelectron spectra
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.05.309

ZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/ n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure.