Dislocations and cracks at Vickers indentations in (0 0 0 1) GaN single crystals

Single-crystal (0 0 0 1) GaN samples have been deformed with a Vickers indenter at room temperature using loads in the range from 0.02 to 4.90 N. Dislocations and cracks at the indentations were examined by means of scanning electron microscopy, cathodoluminescence, light microscopy and transmission...

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Bibliographic Details
Published inPhilosophical magazine letters Vol. 90; no. 8; pp. 565 - 571
Main Authors Ratschinski, I., Leipner, H.S., Heyroth, F., Fränzel, W., Hammer, R., Jurisch, M.
Format Journal Article
LanguageEnglish
Published Abingdon Taylor & Francis Group 01.08.2010
Taylor & Francis Ltd
Subjects
Chemical compounds
Cracks
Crystal lattices
Crystals
Dislocations
Gallium nitrides
GaN
Indentation
Indenters
Mechanical properties
Microscopy
Orientation
Scanning electron microscopy
Single crystals
Temperature
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Summary:Single-crystal (0 0 0 1) GaN samples have been deformed with a Vickers indenter at room temperature using loads in the range from 0.02 to 4.90 N. Dislocations and cracks at the indentations were examined by means of scanning electron microscopy, cathodoluminescence, light microscopy and transmission electron microscopy. Geometrical relations could be found between the dislocation arrangement, cracks and the orientation of the indenter. The orientation of the indenter has only a slight effect on the dislocation pattern, but the crack system is predominantly determined by the symmetry and the orientation of the indenter.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0950-0839
1362-3036
DOI:10.1080/09500839.2010.484398