Poly (α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography (2) F2 Excimer Laser Exposure Characteristics
We have developed a novel single-layer resist for VUV lithography using a terpolymer of methacrylonitrile, p-tert-butoxycarbonyloxy-α-methylstyrene and p-hydroxy-α-methylstyrene. The transmittance at 157nm of this resist was pretty high (-35% per 1000 Å-thickness) due to methacrylonitrile units with...
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Published in | Journal of Photopolymer Science and Technology Vol. 13; no. 3; pp. 467 - 470 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
The Society of Photopolymer Science and Technology(SPST)
2000
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Subjects | |
Online Access | Get full text |
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Summary: | We have developed a novel single-layer resist for VUV lithography using a terpolymer of methacrylonitrile, p-tert-butoxycarbonyloxy-α-methylstyrene and p-hydroxy-α-methylstyrene. The transmittance at 157nm of this resist was pretty high (-35% per 1000 Å-thickness) due to methacrylonitrile units with low absorption. This resist indicated the positive-resist behavior without crosslinking. The 220nm line at 1500Å-thick resist and 300nm line at 2000Å-thick resist were obtained by F2 excimer laser contact exposure. |
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ISSN: | 0914-9244 1349-6336 |
DOI: | 10.2494/photopolymer.13.467 |