Poly (α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography (2) F2 Excimer Laser Exposure Characteristics

We have developed a novel single-layer resist for VUV lithography using a terpolymer of methacrylonitrile, p-tert-butoxycarbonyloxy-α-methylstyrene and p-hydroxy-α-methylstyrene. The transmittance at 157nm of this resist was pretty high (-35% per 1000 Å-thickness) due to methacrylonitrile units with...

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Bibliographic Details
Published inJournal of Photopolymer Science and Technology Vol. 13; no. 3; pp. 467 - 470
Main Authors Kishimura, Shinji, Sasago, Masaru, Shirai, Masamitsu, Kataoka, Atsuko, Shinozuka, Toyofumi, Tsunooka, Masahiro
Format Journal Article
LanguageEnglish
Published The Society of Photopolymer Science and Technology(SPST) 2000
Subjects
157nm
F2 excimer laser
poly (α-methylstyrene)
polymethacrylonitrile
resist
VUV lithography
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Summary:We have developed a novel single-layer resist for VUV lithography using a terpolymer of methacrylonitrile, p-tert-butoxycarbonyloxy-α-methylstyrene and p-hydroxy-α-methylstyrene. The transmittance at 157nm of this resist was pretty high (-35% per 1000 Å-thickness) due to methacrylonitrile units with low absorption. This resist indicated the positive-resist behavior without crosslinking. The 220nm line at 1500Å-thick resist and 300nm line at 2000Å-thick resist were obtained by F2 excimer laser contact exposure.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.13.467