High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application

• Published in: Physica status solidi. C Vol. 4; no. 1; pp. 17 - 20
• Main Authors: Chu, Chen-Fu, Cheng, Chao-Chen, Liu, Wen-Huan, Chu, Jiunn-Yi, Cheng, Hao-Chun, Fan, Feng-Hsu, Yen, Jui-Kang, Tran, Chuong Anh, Doan, Trung
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.01.2007; WILEY‐VCH Verlag
• Subjects: 73.40.Kp; 82.45.Fk; 85.60.Bt; 85.60.Jb
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.200673523

The characteristics of the GaN based Vertical Light Emitting Diodes on Metal alloyed Substrate (VLEDMS) were investigated. The VLEDMS exhibits very good current‐voltage behaviour with low average dynamic resistance of 0.7 Ω and low operated voltage of 3.2 V at 350 mA. High current operation up to 2000 mA in continuous mode was demonstrated without any performance deterioration. The high thermal conductivity of metal alloyed substrate demonstrated excellent heat dissipation capability. Chip scaling without efficiency loss shows a unique property of VLEDMS and enabled to enlarge up to 2 mm × 2 mm chip size. A light output efficiency of 70 lm/W or better was achieved in single chip or multiple chips package. Coupled with mass production ability, VLEDMS is very suitable for general lighting application. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)