Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

• Published in: Ultramicroscopy Vol. 108; no. 11; pp. 1495 - 1499
• Main Authors: Hsu, Chiung-Chih, Hsu, Ray-Quen, Wu, Yue-Han, Chi, Tung-Wei, Chiang, Chen-Hao, Chen, Jenn-Fang, Chang, Mao-Nan
• Format: Journal Article
• Language: English
• Published: Netherlands Elsevier B.V 01.10.2008
• Subjects: Molecular beam epitaxy; Quantum dots; TEM; 68.65.+g; Quantum dots; 73.61.Ey; Molecular beam epitaxy; 78.20; PL; TEM
• ISSN: 0304-3991; 1879-2723
• DOI: 10.1016/j.ultramic.2008.04.098

Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.