Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors

• Published in: Japanese Journal of Applied Physics Vol. 50; no. 6; pp. 066501 - 066501-4
• Main Authors: Chen, Chao-Nan, Su, Kuo-Hui, Chen, Yeong-Chin
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.06.2011
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.50.066501

In this study, a laser direct patterning process application in benzocyclobutene (BCB) organic dielectric passivation-based amorphous silicon (a-Si) thin film transistor (TFT) device fabrication has been carried out using a KrF excimer laser. A BCB organic photoresist material of 2000 nm with a dielectric constant = 2.7 served as the dielectric passivation layer in our device. Compared with conventional processes, laser direct patterning combining BCB organic photoresist dielectric passivation could eliminate at least four process steps. The etching depth of the BCB organic material passivation layer depends on the laser energy density and number of irradiation shots. The hydrogenated a-Si TFT devices are fabricated by replacing the passivation layer and contact hole patterning process. The mobility and threshold voltage reached 0.16 cm 2 V -1 s -1 and $-3.5$ V, respectively. For TFT device performance, laser direct patterning technology is a potential method of replacing photolithography technology in the application of BCB organic dielectric passivation-based TFT manufacture.