Structural variants in heteroepitaxial growth

The occurrence of structural variants during epitaxial growth is examined using two-dimensional symmetry. The modeling of the materials includes equilibrium defect structures and reconstructions in addition to epitaxial strain and flaws. Specific results are presented for single and multi-terrace sy...

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Bibliographic Details
Published inThin solid films Vol. 389; no. 1; pp. 116 - 137
Main Authors Flynn, C.P., Eades, J.A.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 15.06.2001
Elsevier Science
Subjects
Cross-disciplinary physics: materials science; rheology
Epitaxial variants
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Surface structure
Symmetry
Theory and models of film growth
Epitaxial variants
Symmetry
Surface structure
Variant
Surface reconstruction
Incommensurate phases
Epitaxy
Theoretical study
Heteroepitaxy
Modelling
Defect structure
Substrates
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Summary:The occurrence of structural variants during epitaxial growth is examined using two-dimensional symmetry. The modeling of the materials includes equilibrium defect structures and reconstructions in addition to epitaxial strain and flaws. Specific results are presented for single and multi-terrace systems and for miscut substrates. Analytical results for planes on which variants nucleate in equal proportions are obtained simply, from two-dimensional symmetry arguments. These are used to discuss ways to inhibit the growth of unwanted variants.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(01)00768-4