Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal-Oxide Storage

• Published in: IEEE transactions on electron devices Vol. 61; no. 6; pp. 2019 - 2026
• Main Authors: Georgiev, Vihar P., Markov, Stanislav, Vila-Nadal, Laia, Busche, Christoph, Cronin, Leroy, Asenov, Asen
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.06.2014; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Ash; Device variability; Fluctuation; Gates; Logic gates; Media; Metal oxides; Molecular clusters; molecular electronics; MOSFETs; multiscale modeling; Nonvolatile memory; nonvolatile memory (NVM); Numerical models; Optimization; polyoxometalates (POMs); Programming; Solid modeling; Substrates; Device variability; multiscale modeling; molecular electronics; polyoxometalates (POMs); nonvolatile memory (NVM)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2014.2315520

We report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this paper, we developed a multiscale simulation framework that enables the evaluation of variability in the programming window of a flash cell with sub-20-nm gate length. Furthermore, we studied the threshold voltage variability due to random dopant fluctuations and fluctuations in the distribution of the molecular clusters in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media.