Electroluminescence and lasing properties of highly bi-doped PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure

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Bibliographic Details
Published inJournal of electronic materials Vol. 32; no. 2; pp. 39 - 42
Main Authors TAMURA, Wataru, YASUDA, Arata, SUTO, Ken, ITOH, Osamu, NISHIZAWA, Jun-Ichi
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.02.2003
Springer Nature B.V
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electroluminescence
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other luminescence and radiative recombination
Physics
Temperature dependence
Inorganic compounds
Epitaxial layers
Bi-doped
PbTe
Doping
Electroluminescence
Experimental study
Lead tellurides
Vapor deposition
Acceptor donor pair
Bismuth additions
p n junctions
laser operation
Homojunctions
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ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-003-0235-7