Microscopic mechanisms of accurate layer-by-layer growth of β-SiC

• Published in: Thin solid films Vol. 225; no. 1; pp. 240 - 243
• Main Authors: Hara, Shiro, Meguro, T., Aoyagi, Y., Kawai, M., Misawa, S., Sakuma, E., Yoshida, S.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 25.03.1993; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Crystal growth; Monolayer; Surface reaction; Beta form; Silicon Carbides; Epitaxy; Surface layer; LEED diffraction; Auger electron spectrometry; Thin film
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(93)90162-I

Atomic layer epitaxy of cubic SiC was investigated to examine gas reaction on the surface at high temperature using Auger electron spectroscopy and low energy electron diffraction. Self-limiting growth at one and one-third atomic monolayers at 1050°C was observed for exposure of a carbon-terminated surface to Si 2H 6, and self-limiting growth at just one atomic monolayer was observed for exposure of a silicon-saturated surface to C 2H 2. It was also found that the extra partial silicon layer of the silicon-saturated surface desorbs during C 2H 2 exposure. By alternating exposure to Si 2H 6 and C 2H 2, accurate layer-by-layer growth is achieved. In this system, the spontaneous atomic layer desorption of silicon which occurs during C 2H 2 exposure is consistent with the nature of exact atomic layer epitaxy.