Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

The characteristics of GaN Schottky barrier diodes fabricated with TiN and Ni anodes were evaluated in the temperature range from 25 to 175 °C. The Schottky barrier height (ideality factor) increases (decreases) with increasing temperature for both kinds of diodes owing to the barrier height being n...

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Bibliographic Details
Published inSuperlattices and microstructures Vol. 123; pp. 274 - 279
Main Authors Li, Liuan, Chen, Jia, Gu, Xin, Li, Xiaobo, Pu, Taofei, Ao, Jin-Ping
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.11.2018
Subjects
Gallium nitride
Schottky barrier diode
Temperature sensor
Titanium nitride
Titanium nitride
Temperature sensor
Schottky barrier diode
Gallium nitride
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Summary:The characteristics of GaN Schottky barrier diodes fabricated with TiN and Ni anodes were evaluated in the temperature range from 25 to 175 °C. The Schottky barrier height (ideality factor) increases (decreases) with increasing temperature for both kinds of diodes owing to the barrier height being nonhomogeneous. The GaN diode with TiN anode presents better interface quality and thermal stability is adopted for temperature sensing application. It demonstrated that the sensitivity of the TiN diode is approximately 1 mV/K and varies only slightly for all current levels. •Thermal stable TiN is synthesized to alternate Ni metal for GaN SBD fabrication.•The GaN diode with TiN anode presents better interface quality and thermal stability.•The TiN SBD demonstrates excellent potential for temperature sensing application.
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2018.09.007