Realization of red electroluminescence from Ga2O3:Eu/Si based light-emitting diodes

• Published in: Superlattices and microstructures Vol. 150; p. 106814
• Main Authors: Huang, Yafei, Saito, Katsuhiko, Tanaka, Tooru, Guo, Qixin
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.02.2021
• Subjects: Europium electroluminescence; Ga2O3:Eu/Si heterojunction; Light-emitting diodes; Pulsed laser deposition; Europium electroluminescence; Pulsed laser deposition; Light-emitting diodes; Ga2O3:Eu/Si heterojunction
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2021.106814

Eu doped Ga2O3 film has been grown on n-Si (111) substrate by pulsed laser deposition. Excellent structural and optical properties of the obtained Ga2O3:Eu film have been confirmed by X-ray diffraction, Raman and photoluminescence measurements. Subsequently, Ga2O3:Eu/n-Si based light-emitting diode was successfully fabricated with a multilayer structure of ITO/Ga2O3:Eu/n-Si/Au. Intense red electroluminescence peaking at 615 nm has been observed at room temperature by naked eyes from the fabricated device when a positive bias voltage is applied on the n-Si substrate. The current-voltage characteristics and electroluminescence spectra indicate that the Ga2O3:Eu/n-Si based light-emitting diode has a rather low driven voltage of ~7.9 V. The origin of the Eu-related electroluminescence has been clarified to originate from the defect-assisted energy transfer from Ga2O3 host to Eu3+ ions. We believe that this study will offer the possibility to develop the silicon-compatible full-color displays or lighting technology using Ga2O3 as host material. •Eu doped β-Ga2O3 film was deposited on n-Si substrate by pulsed laser deposition.•Red light-emitting diode was fabricated based on Ga2O3:Eu/n-Si heterostructure.•Intense red electroluminescence at 615 nm was achieved from the diode with a low driven voltage of 7.9 V.•The electroluminescence mechanism of Ga2O3:Eu/n-Si based diode was investigated.