Effects of an intense, high-frequency laser field on the binding energy of excitons confined in a GaInNAs/GaAs quantum well

• Published in: Physica. B, Condensed matter Vol. 407; no. 3; pp. 528 - 532
• Main Authors: Yesilgul, U., Ungan, F., Kasapoglu, E., Sarı, H., Sökmen, I.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 01.02.2012; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Exciton binding energy; Physics; Quantum wells; Semiconductors; Semiconductors; Exciton binding energy; Quantum wells; Gallium arsenides; Confinement; Gallium Indium Arsenides Mixed; Semiconductor materials; Impurity density; Variational methods; Effective mass model; Laser radiation; Binding energy; High field; Nitrogen additions; Chemical composition; Bound exciton
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2011.11.030

The effects of an intense, high-frequency laser field linearly polarized along the growth direction on the binding energy of excitons confined in a GaInNAs/GaAs quantum well is computed for different nitrogen and indium mole fractions by means of a variational technique within the effective-mass approximation. Our results show that such laser field creates an additional geometric confinement on the electronic and exciton states in the quantum well and the exciton binding energy depends on both the nitrogen and indium concentrations.