Optimum semiconductors for high-power electronics

• Published in: IEEE transactions on electron devices Vol. 36; no. 9; pp. 1811 - 1823
• Main Authors: Shenai, K., Scott, R.S., Baliga, B.J.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.09.1989; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Avalanche breakdown; Conducting materials; Electrical engineering. Electrical power engineering; Exact sciences and technology; Frequency; III-V semiconductor materials; Power electronics, power supplies; Semiconductivity; Semiconductor devices; Semiconductor materials; Silicon carbide; Temperature; Thermal conductivity
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.34247

Elemental and compound semiconductors, including wide-bandgap semiconductors, are critically examined for high-power electronic applications in terms of several parameters. On the basis of an analysis applicable to a wide range of semiconducting materials and by using the available measured physical parameters, it is shown that wide-bandgap semiconductors such as SiC and diamond could offer significant advantages compared to either silicon or group III-V compound semiconductors for these applications. The analysis uses peak electric field strength at avalanche breakdown as a critical material parameter for evaluating the quality of a semiconducting material for high-power electronics. Theoretical calculations show improvement by orders of magnitude in the on-resistance, twentyfold improvement in the maximum frequency of operation, and potential for successful operation at temperatures beyond 600 degrees C for diamond high-power devices. New figures of merit for power-handling capability that emphasize electrical and thermal conductivities of the material are derived and are applied to various semiconducting materials. It is shown that an improvement in power-handling capabilities of semiconductor devices by three orders of magnitude is feasible by replacing silicon with silicon carbide; improvement in power-handling capability by six orders of magnitude is projected for diamond-based devices.< >