New developments in the applications of proton beam writing

This report describes how proton beam writing can be used to produce direct write, high resolution three dimensional structures on the nano and micron scales in semiconductor materials such as p-type (100) bulk silicon and gallium arsenide. The lattice damage caused by the proton irradiation increas...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 237; no. 1-2; pp. 188 - 192
Main Authors Mistry, P., Gomez-Morilla, I., Grime, G.W., Webb, R.P., Gwilliam, R., Cansell, A., Merchant, M., Kirkby, K.J., Teo, E.J., Breese, M.B.H., Bettiol, A.A., Blackwood, D.J., Watt, F.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.2005
Subjects
Electrochemical etching
GaAs
Proton beam writing
Silicon
42.82.Cr
85.40.Hp
81.16.Nd
Silicon
GaAs
Electrochemical etching
Proton beam writing
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Summary:This report describes how proton beam writing can be used to produce direct write, high resolution three dimensional structures on the nano and micron scales in semiconductor materials such as p-type (100) bulk silicon and gallium arsenide. The lattice damage caused by the proton irradiation increases the electrical resistance of the semiconductors resulting in a raised structure of the scanned area after an electrochemical etch. Advances in this field over the past few years and its relevance to future technology mean that it is now a powerful contender for direct write technology for future nodes 45nm and below.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2005.04.099