Negative differential resistance of porous silicon

A porous silicon Al Schottky barrier diode shows differential negative resistance. The thin wires in porous silicon have much lower electron mobility than that of thick wires, due to electron surface scattering from space confinement. The energy of carriers in thick wires increases with applied bias...

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Bibliographic Details
Published inIEEE electron device letters Vol. 21; no. 12; pp. 587 - 589
Main Authors Lee, Ming-Kwei, Chu, Chi-Hsing, Tseng, Yu-Chu, Shyr, Jong-Min, Kao, Chia-Hsiung
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:A porous silicon Al Schottky barrier diode shows differential negative resistance. The thin wires in porous silicon have much lower electron mobility than that of thick wires, due to electron surface scattering from space confinement. The energy of carriers in thick wires increases with applied bias. Some carriers can overcome the conduction-band discontinuity and flow into the thin wires. The negative differential resistance comes from the mobility difference between thick wires and thin wires in porous silicon.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.887474