Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

Characterized herein is a different physical mechanism for the formation of Ni silicide by incorporating rare earth (RE) metals such as ytterbium (Yb), erbium (Er), and dysprosium (Dy). Although the incorporation of any RE metal increases the Schottky barrier height (SBH) for holes in Ni silicide du...

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Published inJapanese Journal of Applied Physics Vol. 49; no. 5; pp. 055701 - 055701-3
Main Authors Zhang, Ying-Ying, Jung, Soon-Yen, Oh, Jungwoo, Shin, Hong-Sik, Oh, Se-Kyung, Wang, Jin-Suk, Majhi, Prashant, Jammy, Raj, Lee, Hi-Deok
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.05.2010
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Summary:Characterized herein is a different physical mechanism for the formation of Ni silicide by incorporating rare earth (RE) metals such as ytterbium (Yb), erbium (Er), and dysprosium (Dy). Although the incorporation of any RE metal increases the Schottky barrier height (SBH) for holes in Ni silicide due to the formation of a ternary phase silicide, Yb induced the greatest increase in SBH because, unlike the other metals, Yb atoms accumulated at the silicide/silicon interface.
Bibliography:(Color online) (a) $I$--$V$ characteristics of Ni(RE)Si/p-Si Schottky diodes with a diameter of 56 \mbox{$\mu$m} and (b) extracted Schottky barrier height for holes. Inset in (a) shows a uniform cross-sectional FESEM image of a NiSi/p-Si contact for a Ni/TiN structure. (Color online) XRD spectra of Ni(RE)Si for all structures. (Color online) SIMS depth profile of Ni(RE)Si. (a) Ni/TiN, (b) Yb/Ni/TiN, (c) Er/Ni/TiN, and (d) Dy/Ni/TiN. (Color online) XPS spectra of (a) Ni 2p 3/2 , (b) Yb 4d, (c) Er 4d, and (d) Dy 4d core level binding energy.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.055701