5-60-GHz high-gain distributed amplifier utilizing InP cascode HEMTs

• Published in: IEEE journal of solid-state circuits Vol. 27; no. 10; pp. 1434 - 1438
• Main Authors: Yuen, C., Pao, Y.C., Bechtel, N.G.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.10.1992; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Distributed amplifiers; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Gain control; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; MMICs; MODFETs; Noise figure; Performance gain; Frequency characteristic; Noise figure; High electron mobility transistor; Gallium Indium Arsenides Mixed; Indium Phosphides; Interconnection; s parameter; Aluminium Indium Arsenides Mixed; Microwave amplifier; Monolithic integrated circuit; Microstrip; Gain
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/4.156449

A high-gain InP MMIC cascode distributed amplifier was developed which has 12 dB of gain from 5 to 60 GHz with over 20-dB gain control capability and a noise figure of 2.5-4 dB in the Ka band. Lattice-matched InAlAs/InGaAs cascode HEMTs on InP substrate with 0.25- mu m gate length were the active devices. Microstrip was the transmission medium for this MMIC with an overall chip dimension of 2.3 mm*0.9 mm. The gain/noise figure advantages of the InP HEMT over the AlGaAs HEMT and the superior gain performance of the cascode HEMT over the common-source HEMT are demonstrated.< >