Pushing the boundaries of local oxidation nanolithography: Short timescales and high speeds
Fabrication of nanometre-scale structures in short timescales and with high throughput has great importance in the future of nanoscale science and technology. We show that the local oxidation of hydrogen-passivated silicon surfaces by intermittent-contact mode atomic force microscopy can be applied...
Saved in:
Published in | Ultramicroscopy Vol. 108; no. 10; pp. 1120 - 1123 |
---|---|
Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Netherlands
Elsevier B.V
01.09.2008
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Fabrication of nanometre-scale structures in short timescales and with high throughput has great importance in the future of nanoscale science and technology. We show that the local oxidation of hydrogen-passivated silicon surfaces by intermittent-contact mode atomic force microscopy can be applied on timescales as low as 500
ns to create single oxide nanostructures with dimensions of 0.6×15
nm
2. Furthermore, we report on preliminary experiments demonstrating that local oxidation can also be achieved with relative tip-sample speeds in excess of 2
cm
s
−1 in order to pattern larger areas. This was realised using a high-speed scan stage based on a quartz crystal resonator operating at 20
kHz. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0304-3991 1879-2723 |
DOI: | 10.1016/j.ultramic.2008.04.061 |